Effect of a zinc oxide, at the cathode interface, on the efficiency of inverted organic photovoltaic cells based on the CuPc/C60 couple
Identifieur interne : 003149 ( Main/Repository ); précédent : 003148; suivant : 003150Effect of a zinc oxide, at the cathode interface, on the efficiency of inverted organic photovoltaic cells based on the CuPc/C60 couple
Auteurs : RBID : Pascal:11-0237752Descripteurs français
- Pascal (Inist)
- Cathode, Evaluation performance, Cellule solaire, Cellule solaire organique, Couche mince isolante, Revêtement centrifugation, Dépôt centrifugation, Addition étain, Centre accepteur, Barrière potentiel, Résistance série, Shunt, Tension circuit ouvert, Oxyde de zinc, Interface, Phtalocyanine métallique, Complexe de cuivre, Fullerènes, Couche tampon, Multicouche, Oxyde d'indium, Matériau dopé, 8460J, 8105T, C60, ZnO, ITO, Photovoltaïque organique, Bathocuproïne.
English descriptors
- KwdEn :
- Acceptor center, Bathocuproine, Buffer layer, Cathode, Copper complex, Doped materials, Fullerenes, Indium oxide, Insulating thin films, Interface, Metallophthalocyanine, Multiple layer, Open circuit voltage, Organic photovoltaics, Organic solar cells, Performance evaluation, Potential barrier, Series resistance, Shunt, Solar cell, Spin-on coating, Spin-on coatings, Tin addition, Zinc oxide.
Abstract
The effect of ZnO buffer layer on the performances of inverted multilayers organic solar cells has been studied. ZnO:Al conductive films and insulating ZnO films deposited by spin coating have been probed. The ZnO buffer layer has been introduced between the ITO cathode and the Organic acceptor. The cells are based on the multilayer junctions bathocuproine/fullerene/copper phthalocyanine. The organic photovoltaic cells performances improvement depends of the ZnO layer introduced. ZnO:Al conductive layers decreases the potential barrier at the interface cathode/organic. This allows decreasing the series resistance which improves significantly the cell efficiency. Insulating ZnO increases only slightly the solar cells performance by increasing significantly the shunt resistance and therefore the open circuit voltage of the cells.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Effect of a zinc oxide, at the cathode interface, on the efficiency of inverted organic photovoltaic cells based on the CuPc/C<sub>60</sub> couple</title><author><name sortKey="Lare, Y" uniqKey="Lare Y">Y. Lare</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>CUER-UL, Universite de Lome</s1><s2>Lomé</s2><s3>TGO</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>Togo</country><wicri:noRegion>Lomé</wicri:noRegion></affiliation></author><author><name sortKey="Baneto, M" uniqKey="Baneto M">M. Baneto</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>CUER-UL, Universite de Lome</s1><s2>Lomé</s2><s3>TGO</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>Togo</country><wicri:noRegion>Lomé</wicri:noRegion></affiliation></author><author><name sortKey="Cattin, L" uniqKey="Cattin L">L. Cattin</name><affiliation wicri:level="4"><inist:fA14 i1="02"><s1>Universite de Nantes, Institut des Materiaux Jean Rouxel (IMN), CNRS, 2 rue de la Houssinière, BP 32229</s1><s2>44322 Nantes</s2><s3>FRA</s3><sZ>3 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Pays de la Loire</region><settlement type="city">Nantes</settlement></placeName><orgName type="university">Université de Nantes</orgName></affiliation></author><author><name sortKey="Morsli, M" uniqKey="Morsli M">M. Morsli</name><affiliation wicri:level="4"><inist:fA14 i1="03"><s1>Universite de Nantes, Nantes Atlantique Universités, LAMP, EA 3825, Faculté des Sciences et des Techniques, 2 rue de la Houssinière, BP 92208</s1><s2>44000 Nantes</s2><s3>FRA</s3><sZ>4 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Pays de la Loire</region><settlement type="city">Nantes</settlement></placeName><orgName type="university">Université de Nantes</orgName></affiliation></author><author><name sortKey="Jondo, K" uniqKey="Jondo K">K. Jondo</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>CUER-UL, Universite de Lome</s1><s2>Lomé</s2><s3>TGO</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>Togo</country><wicri:noRegion>Lomé</wicri:noRegion></affiliation></author><author><name sortKey="Napo, K" uniqKey="Napo K">K. Napo</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>CUER-UL, Universite de Lome</s1><s2>Lomé</s2><s3>TGO</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>Togo</country><wicri:noRegion>Lomé</wicri:noRegion></affiliation></author><author><name sortKey="Bernede, J C" uniqKey="Bernede J">J. C. Bernede</name><affiliation wicri:level="4"><inist:fA14 i1="03"><s1>Universite de Nantes, Nantes Atlantique Universités, LAMP, EA 3825, Faculté des Sciences et des Techniques, 2 rue de la Houssinière, BP 92208</s1><s2>44000 Nantes</s2><s3>FRA</s3><sZ>4 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Pays de la Loire</region><settlement type="city">Nantes</settlement></placeName><orgName type="university">Université de Nantes</orgName></affiliation></author></titleStmt><publicationStmt><idno type="inist">11-0237752</idno><date when="2011">2011</date><idno type="stanalyst">PASCAL 11-0237752 INIST</idno><idno type="RBID">Pascal:11-0237752</idno><idno type="wicri:Area/Main/Corpus">003141</idno><idno type="wicri:Area/Main/Repository">003149</idno></publicationStmt><seriesStmt><idno type="ISSN">0957-4522</idno><title level="j" type="abbreviated">J. mater. sci., Mater. electron.</title><title level="j" type="main">Journal of materials science. Materials in electronics</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Acceptor center</term><term>Bathocuproine</term><term>Buffer layer</term><term>Cathode</term><term>Copper complex</term><term>Doped materials</term><term>Fullerenes</term><term>Indium oxide</term><term>Insulating thin films</term><term>Interface</term><term>Metallophthalocyanine</term><term>Multiple layer</term><term>Open circuit voltage</term><term>Organic photovoltaics</term><term>Organic solar cells</term><term>Performance evaluation</term><term>Potential barrier</term><term>Series resistance</term><term>Shunt</term><term>Solar cell</term><term>Spin-on coating</term><term>Spin-on coatings</term><term>Tin addition</term><term>Zinc oxide</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Cathode</term><term>Evaluation performance</term><term>Cellule solaire</term><term>Cellule solaire organique</term><term>Couche mince isolante</term><term>Revêtement centrifugation</term><term>Dépôt centrifugation</term><term>Addition étain</term><term>Centre accepteur</term><term>Barrière potentiel</term><term>Résistance série</term><term>Shunt</term><term>Tension circuit ouvert</term><term>Oxyde de zinc</term><term>Interface</term><term>Phtalocyanine métallique</term><term>Complexe de cuivre</term><term>Fullerènes</term><term>Couche tampon</term><term>Multicouche</term><term>Oxyde d'indium</term><term>Matériau dopé</term><term>8460J</term><term>8105T</term><term>C60</term><term>ZnO</term><term>ITO</term><term>Photovoltaïque organique</term><term>Bathocuproïne</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">The effect of ZnO buffer layer on the performances of inverted multilayers organic solar cells has been studied. ZnO:Al conductive films and insulating ZnO films deposited by spin coating have been probed. The ZnO buffer layer has been introduced between the ITO cathode and the Organic acceptor. The cells are based on the multilayer junctions bathocuproine/fullerene/copper phthalocyanine. The organic photovoltaic cells performances improvement depends of the ZnO layer introduced. ZnO:Al conductive layers decreases the potential barrier at the interface cathode/organic. This allows decreasing the series resistance which improves significantly the cell efficiency. Insulating ZnO increases only slightly the solar cells performance by increasing significantly the shunt resistance and therefore the open circuit voltage of the cells.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0957-4522</s0></fA01><fA03 i2="1"><s0>J. mater. sci., Mater. electron.</s0></fA03><fA05><s2>22</s2></fA05><fA06><s2>4</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Effect of a zinc oxide, at the cathode interface, on the efficiency of inverted organic photovoltaic cells based on the CuPc/C<sub>60</sub> couple</s1></fA08><fA11 i1="01" i2="1"><s1>LARE (Y.)</s1></fA11><fA11 i1="02" i2="1"><s1>BANETO (M.)</s1></fA11><fA11 i1="03" i2="1"><s1>CATTIN (L.)</s1></fA11><fA11 i1="04" i2="1"><s1>MORSLI (M.)</s1></fA11><fA11 i1="05" i2="1"><s1>JONDO (K.)</s1></fA11><fA11 i1="06" i2="1"><s1>NAPO (K.)</s1></fA11><fA11 i1="07" i2="1"><s1>BERNEDE (J. C.)</s1></fA11><fA14 i1="01"><s1>CUER-UL, Universite de Lome</s1><s2>Lomé</s2><s3>TGO</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></fA14><fA14 i1="02"><s1>Universite de Nantes, Institut des Materiaux Jean Rouxel (IMN), CNRS, 2 rue de la Houssinière, BP 32229</s1><s2>44322 Nantes</s2><s3>FRA</s3><sZ>3 aut.</sZ></fA14><fA14 i1="03"><s1>Universite de Nantes, Nantes Atlantique Universités, LAMP, EA 3825, Faculté des Sciences et des Techniques, 2 rue de la Houssinière, BP 92208</s1><s2>44000 Nantes</s2><s3>FRA</s3><sZ>4 aut.</sZ><sZ>7 aut.</sZ></fA14><fA20><s1>365-370</s1></fA20><fA21><s1>2011</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>22352</s2><s5>354000191531710080</s5></fA43><fA44><s0>0000</s0><s1>© 2011 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>20 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>11-0237752</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Journal of materials science. Materials in electronics</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>The effect of ZnO buffer layer on the performances of inverted multilayers organic solar cells has been studied. ZnO:Al conductive films and insulating ZnO films deposited by spin coating have been probed. The ZnO buffer layer has been introduced between the ITO cathode and the Organic acceptor. The cells are based on the multilayer junctions bathocuproine/fullerene/copper phthalocyanine. The organic photovoltaic cells performances improvement depends of the ZnO layer introduced. ZnO:Al conductive layers decreases the potential barrier at the interface cathode/organic. This allows decreasing the series resistance which improves significantly the cell efficiency. Insulating ZnO increases only slightly the solar cells performance by increasing significantly the shunt resistance and therefore the open circuit voltage of the cells.</s0></fC01><fC02 i1="01" i2="X"><s0>001D03F15</s0></fC02><fC02 i1="02" i2="X"><s0>001D06C02D1</s0></fC02><fC02 i1="03" i2="3"><s0>001B80A15L</s0></fC02><fC02 i1="04" i2="3"><s0>001B80A05T</s0></fC02><fC02 i1="05" i2="X"><s0>230</s0></fC02><fC03 i1="01" i2="X" l="FRE"><s0>Cathode</s0><s5>01</s5></fC03><fC03 i1="01" i2="X" l="ENG"><s0>Cathode</s0><s5>01</s5></fC03><fC03 i1="01" i2="X" l="SPA"><s0>Cátodo</s0><s5>01</s5></fC03><fC03 i1="02" i2="X" l="FRE"><s0>Evaluation performance</s0><s5>02</s5></fC03><fC03 i1="02" i2="X" l="ENG"><s0>Performance evaluation</s0><s5>02</s5></fC03><fC03 i1="02" i2="X" l="SPA"><s0>Evaluación prestación</s0><s5>02</s5></fC03><fC03 i1="03" i2="X" l="FRE"><s0>Cellule solaire</s0><s5>03</s5></fC03><fC03 i1="03" i2="X" l="ENG"><s0>Solar cell</s0><s5>03</s5></fC03><fC03 i1="03" i2="X" 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